Ring-distribution of oxygen precipitates in Czochralski silicon revealed by low-temperature infrared absorption spectroscopy

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Abstract
The inhomogeneous distribution of oxygen precipitates was investigated in a Czochralski-grown silicon crystal which contained a ring-shaped distribution of oxidation-induced stacking faults. After a two-step anneal the infrared absorption due to two types of oxygen precipitates was mapped along the wafer radius by using Fourier-transform spectroscopy at liquid-He temperature. The low-temperature mapping technique reveals that the generation process of precipitates is different in the ring area from the rest of the wafer.