Dislocation nucleation mechanism and doping effect in p-type ZnSe/GaAs
- 1 March 1994
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (3) , 275-281
- https://doi.org/10.1007/bf02670636
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Dislocation nucleation near the critical thickness in GeSi/Si strained layersPhilosophical Magazine A, 1989