Structural properties of nitrogen-doped ZnSe epitaxial layers grown by MBE
- 1 May 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (5) , 453-456
- https://doi.org/10.1007/bf02661612
Abstract
No abstract availableKeywords
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- Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxyJournal of Applied Physics, 1988