Stimulated recombination in highly excited GaAs
- 15 May 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (15) , 10839-10851
- https://doi.org/10.1103/physrevb.39.10839
Abstract
We consider various theoretical approaches to the evaluation of radiative-recombination spectra in semiconductors. In particular, we analyze in detail the finite-temperature Matsubara and Keldysh procedures and demonstrate explicitly that after suitable modifications the two methods yield identical results for the optical gain. We include correlation effects and the correct band structure in our calculation. Our results for the stimulated emission are in good agreement with experiment and yield new estimates for the carrier-density dependence of the total radiative-recombination lifetime.This publication has 38 references indexed in Scilit:
- Gain Spectrum of an e–h Liquid in Direct Gap SemiconductorsPhysica Status Solidi (b), 1980
- Calculation of the dielectric function for highly excited polar semiconductorsZeitschrift für Physik B Condensed Matter, 1980
- Coulomb effects on the gain and absorption spectra of the electron-hole plasma in GaAsSolid State Communications, 1980
- Line shapes for electron-hole plasmas in semiconductors. I. The heavy-hole to spin-orbit split-band transitions in electron-hole droplets in GePhysical Review B, 1980
- Final state interactions in the gain and absorption spectra of electron‐hole liquidsPhysica Status Solidi (b), 1978
- Theory of Electron–Hole Plasma in CdSPhysica Status Solidi (b), 1976
- Recombination without k-selection rules in dense electron-hole plasmas in high-purity GaAs lasersApplied Physics Letters, 1974
- Coulomb Effects on the Gain Spectrum of SemiconductorsPhysical Review Letters, 1973
- Gain-current relation for GaAs lasers with n-type and undoped active layersIEEE Journal of Quantum Electronics, 1973
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964