Wafer bonding: Investigation and in situ observation of the bond process
- 1 April 1990
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 23 (1-3) , 927-930
- https://doi.org/10.1016/0924-4247(90)87061-m
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Highly selective KOH-based etchant for boron-doped silicon structuresMicroelectronic Engineering, 1989
- Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom EnvironmentJapanese Journal of Applied Physics, 1988
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986
- 1800V bipolar-mode MOSFETs: A first application of silicon wafer direct bonding (SDB) technique to a power devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986