1.3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

This publication has 11 references indexed in Scilit:

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  Electronics Letters, 2000
• Room temperature continuous wave InGaAsN quantumwellvertical-cavity lasers emitting at 1.3 µm
  Electronics Letters, 2000
• 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots
  IEEE Journal of Quantum Electronics, 2000
• Efficient high-temperature CW lasing operationof oxide-confinedlong-wavelength InAs quantum dot lasers
  Electronics Letters, 2000
• Single transverse mode operation of long wavelength(~1.3 µm)InAs GaAs quantum dot laser
  Electronics Letters, 1999
• Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
  IEEE Photonics Technology Letters, 1999
• Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
  Applied Physics Letters, 1999
• InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
  Applied Physics Letters, 1999
• 1.3 μm room-temperature GaAs-based quantum-dot laser
  Applied Physics Letters, 1998
• Vertical cavity lasers based on vertically coupledquantum dots
  Electronics Letters, 1997