Efficient high-temperature CW lasing operationof oxide-confinedlong-wavelength InAs quantum dot lasers
- 6 January 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (1) , 41-42
- https://doi.org/10.1049/el:20000124
Abstract
Efficient, continuous-wave lasing operation of narrow-stripe, oxide-confined, long-wavelength InAs quantum dot lasers in the ground state (λ ≃ 1.28 µm) has been achieved at temperatures up to 100°C. The lasers have a very low threshold current density (Jth = 24 A/cm2), high differential quantum efficiency (55%), and very low internal loss (αi = 0.77 cm-1).Keywords
This publication has 7 references indexed in Scilit:
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laserApplied Physics Letters, 1999
- 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mAIEEE Photonics Technology Letters, 1999
- Optical characteristics of 1.24-μm InAs quantum-dot laser diodesIEEE Photonics Technology Letters, 1999
- 1.3 µm GaAs-based laser using quantum dotsobtained byactivated spinodal decompositionElectronics Letters, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Quantum dot vertical-cavity surface-emitting laser with a dielectric apertureApplied Physics Letters, 1997
- Hydrolyzation oxidation of AlxGa1−xAs-AlAs-GaAs quantum well heterostructures and superlatticesApplied Physics Letters, 1990