An Advanced 2.5nm Oxidized Nitride Gate Dielectric For Highly Reliable 0.25/spl mu/m MOSFETs
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N/sub 2/OPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High performance dual-gate sub-halfmicron CMOSFETs with 6 nm-thick nitride SiO/sub 2/ films in an N/sub 2/O ambientPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)Journal of the Electrochemical Society, 1985