High performance dual-gate sub-halfmicron CMOSFETs with 6 nm-thick nitride SiO/sub 2/ films in an N/sub 2/O ambient
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 425-428
- https://doi.org/10.1109/iedm.1990.237141
Abstract
Sub-half-micrometer dual-gate CMOSFETs have been successfully fabricated with 6-nm-thick nitrided SiO/sub 2/ gate films formed in an N/sub 2/O ambient. Excellent subthreshold characteristics and hot-carrier reliability were achieved because of the good abilities of N/sub 2/O-nitrided SiO/sub 2/ films in both blocking boron penetration and reducing electron traps. The major advantage of this nitridation is that the process is essentially hydrogen-free. This fabrication process is promising as a key technology toward 1/4- mu m-rule CMOS LSIs.<>Keywords
This publication has 4 references indexed in Scilit:
- Nitridation induced surface donor layer in silicon and its impact on the characteristics of n- and p-channel MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Analysis of an ONO gate film effect on n- and p-MOSFET mobilitiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET'sIEEE Transactions on Electron Devices, 1987
- Advantages of thermal nitride and nitroxide gate films in VLSI processIEEE Transactions on Electron Devices, 1982