Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process

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Abstract
Depletion properties of direct Schottky/quantum well (QW) contacts formed by the in situ selective electro-chemical process were systematically characterized by the C-V and electron-beam-induced current (EBIC) techniques. The EBIC images clearly showed that the barrier exists at the edge of the QW layer. It was found that the capacitance of the Schottky/QW contact depends linearly on ln {1/(V bi-V)}, where the V bi is built-in voltage, and that the depletion width obtained from the EBIC signal is proportional to the applied voltage. These results demonstrate that well-behaved depletion characteristics of the Schottky/QW systems can be realized.