Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination
- 1 October 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (10R) , 3301-3302
- https://doi.org/10.1143/jjap.31.3301
Abstract
Hydrogen plasma beam irradiation effects on the surface reconstruction of GaAs substrates are investigated. Successful low temperature removal of the GaAs oxide layer using hydrogen plasma beam irradiation is carried out, and the subsequent reflection high energy electron diffraction (RHEED) observation of the reversible surface reconstruction changes is observed. This reversible surface reconstruction effect is explained in terms of the atomic hydrogen termination of the As dangling bonds.Keywords
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