Modulation Spectroscopies on a GaAs/InAs/GaAs Single-Monolayer Structure
- 1 October 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (10B) , L1784
- https://doi.org/10.1143/jjap.30.l1784
Abstract
Piezoreflectance, photoreflectance and reflectivity measurements have been performed on a sample consisting of one InAs monomolecular plane in bulklike GaAs grown by atomic layer molecular beam epitaxy. The heavy-hole and light-hole characteristics of the two excitonic InAs-related transitions observed are experimentally elucidated for the first time. The electric field modulation observed in the photoreflectance spectra of such a heterostrvcture cannot be attributed to the quantum-confined Stark effect.Keywords
This publication has 16 references indexed in Scilit:
- Spectroscopy study of monolayer InAs/GaAs single and multiple quantum wells grown by molecular beam epitaxySuperlattices and Microstructures, 1991
- Radiative decay of excitonic states in bulklike GaAs with a periodic array of InAs lattice planesPhysical Review B, 1990
- Exciton localization in submonolayer InAs/GaAs multiple quantum wellsPhysical Review B, 1990
- Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxyPhysical Review B, 1990
- Photoluminescence and stimulated emission from monolayer-thick pseudomorphic InAs single-quantum-well heterostructuresPhysical Review B, 1990
- X-ray interference in ultrathin epitaxial layers: A versatile method for the structural analysis of single quantum wells and heterointerfacesPhysical Review B, 1989
- Experimental probing of quantum-well eigenstatesPhysical Review Letters, 1989
- Reflectance line shapes from GaAs/Ga1−xAlxAs quantum well structuresApplied Physics Letters, 1988
- Differential spectroscopy of GaAs-AAs quantum wells: An unambiguous identification of light-hole and heavy-hole statesPhysical Review B, 1987
- Wannier Exciton in an Electric Field. II. Electroabsorption in Direct-Band-Gap SolidsPhysical Review B, 1971