Properties of ultra-thin wafer-bonded silicon-on-insulator MOSFET's
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (6) , 1289-1295
- https://doi.org/10.1109/16.81619
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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