Optical monitoring of the growth rate reduction by CCl4 during metalorganic vapour-phase epitaxy deposition of carbon doped GaAs
- 1 August 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 191 (4) , 734-739
- https://doi.org/10.1016/s0022-0248(98)00384-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Strain and critical layer thickness analysis of carbon-doped GaAsSolid State Communications, 1996
- Carbon doping and growth rate reduction by CCl4 during metalorganic chemical-vapor deposition of GaAsJournal of Applied Physics, 1994
- Carbon doping characteristics of GaAs and Al0.3Ga0.7As grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4Journal of Crystal Growth, 1994
- Heavily doped p-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4Journal of Applied Physics, 1992
- Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p-type GaAsApplied Physics Letters, 1991
- LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistorsJournal of Crystal Growth, 1991
- Carbon doping exceeding 1020 cm-3 in GaAs grown by AP-MOVPEJournal of Crystal Growth, 1991
- p-type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachlorideApplied Physics Letters, 1990
- AlGaAs/GaAs heterojunction bipolar transistors with heavily C-doped base layers grown by flow-rate modulation epitaxyApplied Physics Letters, 1989