Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance
- 1 November 1976
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (11) , 931-934
- https://doi.org/10.1016/0038-1101(76)90105-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
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- Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures—I. Electric field and potential distributionsSolid-State Electronics, 1975
- High frequency space charge layer capacitance of strongly inverted semiconductor surfacesSolid-State Electronics, 1974
- Saturation capacitance of thin oxide MOS structures and the effective surface density of states of siliconSolid-State Electronics, 1974
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- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Experimental Verification of the Surface Quantization of an-Type Inversion Layer of Silicon at 300 and 77°KPhysical Review B, 1972
- A general solution of the quantization in a semiconductor surface inversion layer in the electric quantum limitPhysics Letters A, 1972
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Negative Field-Effect Mobility on (100) Si SurfacesPhysical Review Letters, 1966