Nature of core-electron excited states in CaF_{2} determined by high-resolution absorption and electron-emission studies
- 3 September 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (10) , 1243-1246
- https://doi.org/10.1103/physrevlett.65.1243
Abstract
Combining high-resolution absorption and electron-emission spectra for , we have investigated the nature of the electronic transitions near the Ca L edge and the F K edge. The presence or absence of spectator and participator lines in the Auger decay of the core-hole excited states is direct spectroscopic evidence which enables us to infer whether or not the final state in the absorption transition is a bound state. Additionally we obtain information about the location of the excited-state electron relative to the ion cores.
Keywords
This publication has 14 references indexed in Scilit:
- ,3 x-ray-absorption edges of compounds: , , , and in (octahedral) symmetryPhysical Review B, 1990
- Crystal-field splitting of core excitons in ionic crystalsPhysical Review B, 1989
- Comment on "Determination of Interface States for Ca/Si(111) from Near-Edge X-Ray-Absorption Measurements"Physical Review Letters, 1988
- Himpselet al.ReplyPhysical Review Letters, 1988
- Electronic structure of the/Si(111) interfacePhysical Review B, 1986
- Determination of Interface States for Ca/Si(111) from Near-Edge X-Ray-Absorption MeasurementsPhysical Review Letters, 1986
- Deexcitation Electron Spectroscopy: A Probe for the Localisation of Valence Wavefunctions in Free and Adsorbed MoleculesAustralian Journal of Physics, 1986
- Epitaxial growth of CaF2 on GaAs(100)Journal of Vacuum Science & Technology A, 1985
- Atomic nature of thewhite lines in Ca, Sc, and Ti metals as revealed by resonant photoemissionPhysical Review B, 1983
- Far-Ultraviolet Reflectance Spectra and the Electronic Structure of Ionic CrystalsPhysical Review B, 1972