The role of crystal diameter and impurity hardening on the threshold for dislocation formation in LEC GaAs
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3) , 280-286
- https://doi.org/10.1016/0022-0248(86)90449-5
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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