Transmission electron microscopy study of microdefects in dislocation-free GaAs and InP crystals
- 1 May 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5) , 3312-3321
- https://doi.org/10.1063/1.326372
Abstract
The transmission electron microscopy study has been carried out to characterize the structural defects in heavily impurity‐doped LEC‐grown GaAs and InP crystals which are free from native dislocations. The microdefects in S‐ and Te‐doped GaAs crystals were found to be mainly Frank‐type stacking faults and prismatic dislocation loops. Diffraction contrast analysis revealed that all the microdefects were of interstitial type. However, in Zn‐doped GaAs and Zn‐, S‐, and Te‐doped InP crystals, the microdefects were hardly observed, which suggests that those crystals could be useful substrates for electronic devices. The appearance, especially in GaAs : S, of microdefects and also of helical dislocations associated with the effects of impurities on reducing dislocations are discussed.This publication has 22 references indexed in Scilit:
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976
- Interstitial condensation in n+ GaAsJournal of Materials Science, 1975
- The nature of inclusions in heavily tellurium-doped gallium arsenideJournal of Materials Science, 1974
- Interdependence of strain, precipitation, and dislocation formation in epitaxial Se-doped GaAsJournal of Applied Physics, 1974
- The nature of defects inn+ gallium arsenidePhilosophical Magazine, 1974
- Electrical and electron microscope studies of the annealing of tellurium-doped gallium arsenidePhilosophical Magazine, 1971
- Image contrast of triple loops in tellurium-doped gallium arsenidePhilosophical Magazine, 1969
- Stacking-faults in tellurium-doped gallium arsenideJournal of Materials Science, 1968
- Detection of Selenium Clustering in GaAs by Transmission Electron MicroscopyJournal of Applied Physics, 1967