Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H–SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (112̄0) Face
- 1 November 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (11B) , L1201
- https://doi.org/10.1143/jjap.40.l1201
Abstract
The interface properties of 4H-silicon carbide (SiC) metal-oxide-semiconductor (MOS) capacitors and the electrical properties of MOS field-effect transistors (MOSFETs) on the (112̄0) face fabricated using pyrogenic reoxidation annealing (pyrogenic ROA) have been characterized. Pyrogenic ROA reduces the interface-state density near the conduction band, resulting in an increase in the inversion channel mobility and a decrease of the threshold voltage for the MOSFETs with both dry and wet gate-oxides. Eventually, a high channel mobility of 68 cm2/(V·s) was successfully achieved in a MOSFET with wet gate-oxide using the pyrogenic ROA. On the (112̄0) face, the channel mobility of MOSFETs strongly depends on the interface-state density near the conduction band.Keywords
This publication has 6 references indexed in Scilit:
- Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxideIEEE Electron Device Letters, 2001
- A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (112̄0) faceApplied Physics Letters, 2001
- Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS DevicesMaterials Science Forum, 2000
- Interface trap profile near the band edges at the 4H-SiC/SiO2 interfaceApplied Physics Letters, 2000
- High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) faceIEEE Electron Device Letters, 1999
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996