High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (12) , 611-613
- https://doi.org/10.1109/55.806101
Abstract
A dramatic improvement of inversion channel mobility in 4H-SiC MOSFETs was successfully achieved by utilizing the (112~0) face: 17 times higher (95.9 cm 2 /Vs) than that on the conventional (0001) Si-face (5.59 cm 2 /Vs). A low threshold voltage of MOSFETs on the (112~0) face indicates that the (112~0) MOS interface has fewer negative charges than the (0001) MOS interface. Small anisotropy of channel mobility in 4H-SiC MOSFETs (μ/sub (11~00)//μ/sub (0001)/=0.85) reflects the small anisotropy in bulk electron mobility.Keywords
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