Physical aspects of ion beam assisted deposition
- 1 February 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 46 (1-4) , 384-391
- https://doi.org/10.1016/0168-583x(90)90734-c
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Binary collision cascade prediction of critical ion-to-atom arrival ratio in the production of thin films with reduced intrinsic stressNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- The role of ion/surface interactions and photo-induced reactions during film growth from the vapor phaseNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion-beam-induced epitaxial vapor-phase growth: A molecular-dynamics studyPhysical Review B, 1987
- Ion-Beam-Assisted Deposition and SynthesisMRS Bulletin, 1987
- Property modification and synthesis by low energy particle bombardment concurrent with film growthNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion-Assisted Processes In Optical Thin Film DepositionPublished by SPIE-Intl Soc Optical Eng ,1986
- A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growthJournal of Crystal Growth, 1986
- Ion-based methods for optical thin film depositionJournal of Materials Science, 1986
- Modification of niobium film stress by low-energy ion bombardment during depositionJournal of Vacuum Science and Technology, 1982
- Reactive film preparationThin Solid Films, 1976