Reactive film preparation
- 1 February 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 32 (1) , 11-18
- https://doi.org/10.1016/0040-6090(76)90545-9
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Application of nematic liquid crystals for the investigation of p–n junctions and insulating layersPhysica Status Solidi (a), 1972
- Some Properties of Silicon Nitride Films Produced by Radio Frequency Glow Discharge Reaction of Silane and NitrogenJapanese Journal of Applied Physics, 1969
- The Preparation and Properties of Amorphous SiliconJournal of the Electrochemical Society, 1969
- Silicon oxide and nitride films deposited by an r.f. glow-dischargeThin Solid Films, 1968
- Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS DiodesJapanese Journal of Applied Physics, 1968
- The Effects of Gas Pressure and Velocity on Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†International Journal of Electronics, 1967
- The Preparation and Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio Frequency Glow Discharge ReactionJournal of the Electrochemical Society, 1967
- Aspects physico-chimiques de la préparation de couches minces semiconductrices par condensation de plasmas froidsRevue de Physique Appliquée, 1966
- Chemical vapour deposition promoted by r.f. dischargeSolid-State Electronics, 1965
- Epitaxial Silicon Films by the Hydrogen Reduction of SiCl[sub 4]Journal of the Electrochemical Society, 1961