Effect of a hydrogen plasma on various a-Si : Hx structures at low temperatures
- 1 January 1980
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 41 (2) , 31-34
- https://doi.org/10.1051/jphyslet:0198000410203100
Abstract
The possibility of changing the electronic properties of a-Si : H films by contact with a hydrogen argon plasma at 190 °C is demonstrated. The variation in hydrogen content, optical gap and conductivity versus 1/T for increasing interaction, times is reportedKeywords
This publication has 4 references indexed in Scilit:
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- Hydrogenation of evaporated amorphous silicon films by plasma treatmentApplied Physics Letters, 1978
- Influence of interface charges on transport measurements in amorphous silicon filmsJournal de Physique, 1978
- Photoluminescence of hydrogenated amorphous siliconApplied Physics Letters, 1977