Some recent fundamental advances in radiative and nonradiative transitions in semiconductors

This publication has 24 references indexed in Scilit:

• Undulation Spectra of GaP: N
  Physical Review Letters, 1975
• Theory of the optical properties of resonant states in nitrogen-doped semiconductor alloys
  Physical Review B, 1975
• Index Dispersion above the Fundamental Band Edge in Nitrogen-Doped $\mathrm{Ga}{\mathrm{As}}_{1-y}{\mathrm{P}}_y$ ($y=0.38\mathrm{}$, $E_{\mathrm{N}}<E_{\Gamma }$)
  Physical Review Letters, 1974
• Electronic impurity levels in semiconductors
  Reports on Progress in Physics, 1974
• Optical Emission From Semiconductors
  Annual Review of Materials Science, 1974
• Effect of crystal composition on ``quasidirect'' recombination and LED performance in the indirect region of GaAs1−xPx:N
  Applied Physics Letters, 1974
• Theory of isoelectronic traps
  Journal of Luminescence, 1973
• Pumping of GaAs1−x Px : N (at 77 °K, for x≲0.53) by an electron beam from a gas plasma
  Journal of Applied Physics, 1973
• Binding to Isoelectronic Impurities in Semiconductors
  Physical Review Letters, 1972
• Undulation Spectra of GaP Associated with the Isoelectronic Trap N
  Physical Review Letters, 1971