Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high-energy electron irradiation and annealing
- 1 October 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (7) , 2680-2691
- https://doi.org/10.1063/1.351517
Abstract
No abstract availableThis publication has 52 references indexed in Scilit:
- Evidence that burst noise is a multi-step phenomenonSolid-State Electronics, 1990
- A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistorsIEEE Transactions on Electron Devices, 1990
- Burst-type noise mechanisms in bipolar transistorsSolid-State Electronics, 1989
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- Semiconductor noisePhysical Review B, 1988
- Noise of junction devicesPhysical Review B, 1988
- Microplasma Fluctuations in SiliconJournal of Applied Physics, 1959
- Microplasmas in SiliconPhysical Review B, 1957
- Avalanche Breakdown in SiliconPhysical Review B, 1954
- On the noise spectra of semi-conductor noise and of flicker effectPhysica, 1950