Effect of group V/III flux ratio on the reliability of GaAs/Al0.3Ga0.7As laser diodes prepared by molecular beam epitaxy
- 25 January 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (4) , 252-254
- https://doi.org/10.1063/1.99484
Abstract
The effect of group V/III flux ratio γ on the reliability of GaAs/Al0.3Ga0.7As double‐heterostructure lasers grown by molecular beam epitaxy at 720 °C has been studied. The threshold current does not change with γ. By contrast, the degradation rate strongly depends on γ and it takes a minimum at γ∼3 where the photoluminescence intensity of the Al0.3Ga0.7As cladding layer is maximum. In the case of γ∼3, the degradation rate is lower than that of lasers grown by liquid phase epitaxy.Keywords
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