Raman scattering from boron-implanted laser-annealed silicon

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Abstract
Measurements of the line shape of the silicon optic mode in boron‐implanted ruby‐laser‐annealed silicon were analyzed assuming a Fano‐type interaction between the discrete optic mode and the continuous valence band states. The results yielded a utilization coefficient of 0.89±0.09 for the boron impurities. Measurements of the ratio of the intensity of the boron local mode to that of the silicon optic mode as a function of excitation wavelength are consistent with the conclusion of other workers that laser annealing is more effective than thermal annealing in reducing lattice damage.