Laser-induced homoepitaxy of GaP
- 14 March 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (11) , 919-921
- https://doi.org/10.1063/1.99273
Abstract
Laser-induced pyrolytic process is utilized to ‘‘direct write’’ epitaxial GaP structures. The precursors used were trimethylgallium and tertiarybutylphosphine, a new phosphorus donor. Dependence of the epitaxial growth on several deposition parameters is examined.Keywords
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