Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane
- 20 November 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 21 (2-3) , 165-168
- https://doi.org/10.1016/0921-5107(93)90340-s
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxyApplied Physics Letters, 1992
- Growth of InP in chemical beam epitaxy with high purity tertiarybutylphosphineJournal of Crystal Growth, 1992
- High-purity InP layer grown by metalorganic chemical vapor deposition using tertiarybutylphosphineApplied Physics Letters, 1991
- High quality Fe-doped semi-insulating InP epitaxial layers grown by low-pressure organometallic vapor phase epitaxy using tertiarybutylphosphineApplied Physics Letters, 1991
- Chemical beam epitaxy of indium phosphideJournal of Crystal Growth, 1990
- Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphineApplied Physics Letters, 1990
- The growth of GaAs, AIGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkylsJournal of Electronic Materials, 1986
- Metalorganic CVD of GaAs in a molecular beam systemJournal of Crystal Growth, 1981