Pulsed-laser annealing of implanted layers in GaAs
- 1 May 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (9) , 597-599
- https://doi.org/10.1063/1.90887
Abstract
Semi‐insulating Si‐implanted GaAs has been irradiated by a ruby‐laser pulse (λ=0.694 μm, tp=15 ns) without using an encapsulant. Hall‐effect measurements indicate that the values of sheet resistance, effective sheet electron concentration, and effective electron mobilities are roughly comparable to those of conventionally annealed samples. TEM micrographs show a difference in the defect structure after these two types of annealing.Keywords
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