Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity
- 28 June 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 16 (7) , 1718-1720
- https://doi.org/10.1109/lpt.2004.829526
Abstract
We report solar-blind Al/sub x/Ga/sub 1-x/N-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values up to 6 V. The device responsivity increased with reverse bias and reached 0.11 A/W at 261 nm under 10-V reverse bias. The detectors exhibited a cutoff around 283 nm, and a visible rejection of four orders of magnitude at zero bias. Low dark current values led to a high differential resistance of 9.52/spl times/10/sup 15/ /spl Omega/. The thermally limited detectivity of the devices was calculated as 4.9/spl times/10/sup 14/ cm/spl middot/Hz/sup 1/2/W/sup -1/.Keywords
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