The application of elastobirefringence to the study of strain fields and dislocations in III–V compounds
- 1 August 1980
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8) , 4368-4374
- https://doi.org/10.1063/1.328299
Abstract
The basic relations between the strain fields in III–V crystals and their elastobirefringence transmission properties are derived. The results are applied in an analysis of the contrast phenomena observed in III–V crystals containing misfitting epitaxial structures as well as the contrast features due to dislocations using visible and infrared birefringence.This publication has 22 references indexed in Scilit:
- Optical birefringence images of dislocations in large gallium phosphide crystalsJournal of Crystal Growth, 1977
- The misfit dislocation structure of an InGaAs/GaAs heterojunction with low misfitThin Solid Films, 1977
- Stress-induced birefringence of mismatching III-V heterojunctionsPhysica Status Solidi (a), 1976
- Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser materialApplied Physics Letters, 1976
- Defect structure of degraded GaAlAs-GaAs double heterojunction lasersPhilosophical Magazine, 1975
- Degradation sources in GaAs-AlGaAs double-heterostructure lasersIEEE Journal of Quantum Electronics, 1975
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- Application of the photoelasticity method to the investigation of stresses around individual dislocations and their influence on crystal propertiesPhysica Status Solidi (a), 1970
- Misfit dislocations in semiconductorsJournal of Physics and Chemistry of Solids, 1966
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949