A study on Au/Ni/Au/Ge/Pd ohmic contact and its application to AlGaAs/GaAs heterojunction bipolar transistors
- 29 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (13) , 1854-1856
- https://doi.org/10.1063/1.119421
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- On the low resistance Au/Ge/Pd ohmic contact to n-GaAsJournal of Applied Physics, 1996
- Low resistance (~10 -6 Ωcm 2 )ohmic contact to n -GaAs processed at 175°CElectronics Letters, 1995
- Low resistance pd/ge ohmic contacts to epitaxially lifted-off n-type GaAs filmJournal of Electronic Materials, 1995
- Pt/Ti/Ge/Pd ohmic contacts to GaAs: A structural, chemical, and electrical investigationJournal of Vacuum Science & Technology A, 1994
- Ohmic contact study for quantum effect transistors and heterojunction bipolar transistors with InGaAs contact layersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Thermally stable Pd/Ge ohmic contacts to n-type GaAsJournal of Applied Physics, 1991
- Low-resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd schemeApplied Physics Letters, 1989