On the low resistance Au/Ge/Pd ohmic contact to n-GaAs
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (8) , 4211-4215
- https://doi.org/10.1063/1.361788
Abstract
We report that a Au/Ge/Pd layered structure can result in low contact resistivities (∼10−6 Ω cm2) to n‐GaAs processed in three temperature ranges (175–200, 340–350, and 425–450 °C). The contacts processed below the Au–Ge eutectic temperature (361 °C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented.This publication has 12 references indexed in Scilit:
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