Charged dangling bonds in undoped amorphous silicon
- 29 June 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (26) , 3262-3264
- https://doi.org/10.1063/1.106713
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Nature of deep defects in bulk VHF-GD a-Si:HJournal of Non-Crystalline Solids, 1991
- Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defectsPhysical Review B, 1990
- Effect of Reduction in Impurity Content for a-Si:H FilmsJapanese Journal of Applied Physics, 1990
- Experimental evidence for zero-correlation-energy deep defects in intrinsic hydrogenated amorphous siliconPhysical Review Letters, 1990
- Excitation-energy dependence of optically induced ESR ina-Si:HPhysical Review B, 1989
- Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPMJapanese Journal of Applied Physics, 1989
- Occupancy of dangling bond defects in doped hydrogenated amorphous siliconSolid State Communications, 1987
- Photoconductivity and light-induced change ina-Si:HPhysical Review B, 1986
- Structure and Electronic States in Disordered SystemsPhysical Review Letters, 1986
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982