Transport measurements of Sb contacts to InP(110)
- 29 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (9) , 739-741
- https://doi.org/10.1063/1.99341
Abstract
The electrical properties of antimony contacts to vacuum cleaved n‐ and p‐type InP(110) surfaces were studied using current‐voltage and capacitance‐voltage techniques. While the Sb/n‐InP(110) interface forms an ‘‘ohmic’’ contact, an extremely large Schottky barrier was found at Sb/p‐InP(110) contacts.Keywords
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