A molybdenium source, gate and drain metallization system for GaAs MESFET layers grown by molecular beam epitaxy
- 1 August 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (8) , 823-829
- https://doi.org/10.1016/0038-1101(80)90098-2
Abstract
No abstract availableKeywords
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