Performance requirements for power MOSFET models
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 12 (1) , 36-45
- https://doi.org/10.1109/63.554167
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Simulation of high frequency PWM and quasi-resonant converters using the lumped-charge power MOSFET modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An accurate model for power DMOSFETs including interelectrode capacitancesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The lumped-charge power MOSFET model, including parameter extractionIEEE Transactions on Power Electronics, 1995
- Experimental characterization of power VDMOS transistors in commutation and a derived model for computer-aided designIEEE Transactions on Power Electronics, 1989