Low-threshold InGaAlAs/InP vertical-cavity surface-emittinglaser diodes for 1.8 µm wavelength range
- 20 July 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (15) , 1286-1287
- https://doi.org/10.1049/el:20000934
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Submilliamp long-wavelength InP-based vertical-cavitysurface-emitting laser with stable linear polarisationElectronics Letters, 2000
- Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiencyApplied Physics Letters, 2000
- +55°C pulse lasing at 1.56 µm of all-monolithicInGaAlAs/InP vertical cavity lasersElectronics Letters, 1999
- 2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output powerIEEE Photonics Technology Letters, 1999
- Sb-based monolithic VCSELoperating near 2.2 µm at room temperatureElectronics Letters, 1998