2.05-μm wavelength InGaAs-InGaAs distributed-feedback multiquantum-well lasers with 10-mW output power
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (1) , 33-35
- https://doi.org/10.1109/68.736381
Abstract
Single-mode operation beyond 2.05-/spl mu/m wavelength has been achieved in InGaAs-InGaAs distributed-feedback (DFB) laser with four quantum wells. The continuous-wave output power is 10.5 mW at a drive current of 200 mA and 25/spl deg/C, The tuning range of the wavelength is between 2.051-2.056 /spl mu/m with a temperature tuning rate of +0.125 nm//spl deg/C.Keywords
This publication has 12 references indexed in Scilit:
- Characteristics dependence on confinement structure and single-mode operation in 2-μm compressively strained InGaAs-lnGaAsP quantum-well lasersIEEE Photonics Technology Letters, 1998
- 2.0-μm single-mode operation of InGaAs-InGaAsP distributed-feedback buried-heterostructure quantum-well lasersIEEE Photonics Technology Letters, 1997
- The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasersJournal of Applied Physics, 1995
- InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 /spl mu/mIEEE Photonics Technology Letters, 1995
- 1.95-/spl mu/m strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasersIEEE Photonics Technology Letters, 1994
- Numerical analysis of static wavelength shift for DFB lasers with longitudinal mode spatial hole burningIEEE Photonics Technology Letters, 1991
- 1.48- mu m high-power InGaAs/InGaAsP MQW LDs for Er-doped fiber emulsifiersIEEE Photonics Technology Letters, 1991
- Effects of strain in multiple quantum well distributed feedback lasersApplied Physics Letters, 1990
- Dependence of emission wavelength on cavity length and facet reflectivities in multiple quantum well semiconductor lasersApplied Physics Letters, 1989
- Stability in single longitudinal mode operation in GaInAsP/InP phase-adjusted DFB lasersIEEE Journal of Quantum Electronics, 1987