The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers

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Abstract
The temperature dependence of threshold current between 130 and 310 K of 1.65 μm In0.53Ga0.47As–InP bulk lasers grown by chemical beam epitaxy has been measured. Comparison with a calculation of the spontaneous recombination current at threshold allows one to determine the proportion of current loss over this temperature range. It is found that the loss can be described using an Auger recombination component of the form Rauger=C′n3 exp(−Ea/kBT) where n is the carrier population density in the undoped active region. The activation energy Ea is found to be 39±5 meV which is in excellent agreement with the theoretical value for the conduction to heavy hole band/split-off to heavy hole band Auger process. The values obtained for the Auger coefficient C over the temperature range are in close agreement with published values obtained by time resolved photoluminescence.