Formation of buried CoSi2 layers by ion implantation, studied by Mössbauer spectroscopy and rutherford backscattering spectroscopy
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 157-161
- https://doi.org/10.1016/0921-5107(89)90234-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Epitaxial silicidesThin Solid Films, 1982