16.7 fA/cell tunnel-leakage-suppressed 16 Mb SRAM for handling cosmic-ray-induced multi-errors

22 December 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 1 (01936530) , 302-494
https://doi.org/10.1109/isscc.2003.1234308

Abstract

A 16 Mb SRAM based on an electric-field-relaxed scheme and an alternate error checking and correction architecture for handling cosmic-ray-induced multi-errors is realized in 0.13 /spl mu/m CMOS technology. The IC has a 16.7 fA/cell standby current, a cell size of 2.06 /spl mu/m/sup 2/ and a 99.5% smaller SER.

Keywords

This publication has 3 references indexed in Scilit:

Universal-Vdd 0.65-2.0V 32 kB cache using voltage-adapted timing-generation scheme and a lithographical-symmetric cell
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
Neutron induced single-word multiple-bit upset in SRAM
IEEE Transactions on Nuclear Science, 1999
IBM experiments in soft fails in computer electronics (1978–1994)
IBM Journal of Research and Development, 1996