Electron counting of single-electron tunneling current
- 23 March 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (13) , 2343-2345
- https://doi.org/10.1063/1.1691491
Abstract
Single-electron tunneling through a quantum dot is detected by means of a radio-frequency single-electron transistor. Poisson statistics of single-electron tunneling events are observed from frequency domain measurements, and individual tunneling events are detected in the time-domain measurements. Counting tunneling events gives an accurate current measurement in the saturated current regime, where electrons tunnel into the dot only from one electrode and tunnel out of the dot only to the other electrode.Keywords
This publication has 10 references indexed in Scilit:
- Real-time detection of electron tunnelling in a quantum dotNature, 2003
- Few-electron quantum dot circuit with integrated charge read outPhysical Review B, 2003
- Dephasing in an isolated double-quantum-dot system deduced from single-electron polarization measurementsPhysical Review B, 2003
- Impedance analysis of a radio-frequency single-electron transistorApplied Physics Letters, 2002
- Radio-Frequency Single-Electron Transistor as Readout Device for Qubits: Charge Sensitivity and BackactionPhysical Review Letters, 2001
- Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor techniqueApplied Physics Letters, 2000
- The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive ElectrometerScience, 1998
- Shot-Noise Suppression in the Single-Electron Tunneling RegimePhysical Review Letters, 1995
- Time-correlated single-electron tunneling in one-dimensional arrays of ultrasmall tunnel junctionsPhysical Review Letters, 1989
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989