Impedance analysis of a radio-frequency single-electron transistor
Open Access
- 15 October 2002
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (17) , 3257-3259
- https://doi.org/10.1063/1.1515883
Abstract
We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf–SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior.Keywords
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