Acceptor Concentration Control of P-ZnSe Using Nitrogen and Helium Mixed Gas Plasma
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12A) , L1722
- https://doi.org/10.1143/jjap.32.l1722
Abstract
Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration can be controlled from 6×1016 to 7×1017 cm-3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3×1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. p-ZnSe layers grown with this technique were used for blue-green laser structures. Lasing was observed at 77 K under pulse operation.Keywords
This publication has 16 references indexed in Scilit:
- Helium-excited reactive magnetron sputtering for stress-free silicon nitride filmsApplied Physics Letters, 1993
- Adsorption and Dissociation Mechanism of Excited N2 on ZnSe SurfaceJapanese Journal of Applied Physics, 1993
- Measurement of SiH2 Densities in an RF-Discharge Silane Plasma Used in the Chemical Vapor Deposition of Hydrogenated Amorphous Silicon FilmJapanese Journal of Applied Physics, 1992
- Low-resistivity p-type ZnSe:N grown by molecular beam epitaxy using a nitrogen free-radical sourceJournal of Vacuum Science & Technology A, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Non-contact electrical characterization of low-resistivity p-type ZnSe:N grown by molecular beam epitaxyApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growthJournal of Crystal Growth, 1991
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical DopingJapanese Journal of Applied Physics, 1991
- Spectroscopic emission studies of O2/He and N2/He plasmas in remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1988