Radiation Effects on Silicon Charge-Coupled Devices
Open Access
- 1 December 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components, Hybrids, and Manufacturing Technology
- Vol. 1 (4) , 353-365
- https://doi.org/10.1109/tchmt.1978.1135311
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- MOS Hardening Approaches for Low-Temperature ApplicationsIEEE Transactions on Nuclear Science, 1977
- Low-Temperature Radiation Damage Effects in a Room-Temperature Radiation-Hard Surface Channel CCDIEEE Transactions on Nuclear Science, 1977
- Hole Transport and Recovery Characteristics of SiO2 Gate InsulatorsIEEE Transactions on Nuclear Science, 1976
- Radiation-Induced Charge Transport and Charge Buildup in SiO2 Films at Low TemperaturesIEEE Transactions on Nuclear Science, 1976
- Role Transport and Charge Relaxation in Irradiated SiO2 MOS CapacitorsIEEE Transactions on Nuclear Science, 1975
- Unified Model of Damage Annealing in CMOS, from Freeze-In to Transient AnnealingIEEE Transactions on Nuclear Science, 1975
- Hole mobility and transport in thin SiO2 filmsApplied Physics Letters, 1975
- Low−temperature irradiation effects in SiO2−insulated MIS devicesJournal of Applied Physics, 1975
- Radiation Effects in Charge Coupled DevicesIEEE Transactions on Nuclear Science, 1975
- Effects of ionizing radiation on charge-coupled device structuresIEEE Transactions on Nuclear Science, 1974