Free energy of the concerted-exchange mechanism for self-diffusion in silicon
- 15 January 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (3) , 1310-1314
- https://doi.org/10.1103/physrevb.53.1310
Abstract
The free energy of the concerted exchange mechanism for self-diffusion in silicon is estimated using the thermodynamic integration method and Monte Carlo (MC) simulations with an interatomic potential fitted to reproduce local-density-approximation calculations. Anharmonicity and relaxation are fully taken into account in the calculations, since the phase space is extensively explored by the MC simulations. The results indicate that the concerted exchange mechanism can have a significant contribution to the self-diffusion constant in silicon. © 1996 The American Physical Society.This publication has 15 references indexed in Scilit:
- First-principles calculations of self-diffusion constants in siliconPhysical Review Letters, 1993
- Contribution of concerted exchange to the entropy of self-diffusion in SiPhysical Review B, 1993
- Entropy calculation beyond the harmonic approximation: Application to diffusion by concerted exchange in SiPhysical Review Letters, 1991
- Diffusion without Vacancies or Interstitials: A New Concerted Exchange MechanismPhysical Review Letters, 1986
- Migration of interstitials in siliconPhysical Review B, 1984
- Silicon self-interstitial migration: Multiple paths and charge statesPhysical Review B, 1984
- Theory of electronically stimulated defect migration in semiconductorsPhysical Review B, 1984
- Microscopic Theory of Atomic Diffusion Mechanisms in SiliconPhysical Review Letters, 1984
- Barrier to Migration of the Silicon Self-InterstitialPhysical Review Letters, 1984
- Frequency factors and isotope effects in solid state rate processesJournal of Physics and Chemistry of Solids, 1957