Epitaxial Growth of Thick Ag/Si(111) Films
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Channeling study of structural effects at the Al(111)/Si(111) interface formed by ionized cluster beam depositionApplied Physics Letters, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Nucleation, growth and the intermediate layer in Ag/Si(100) and Ag/Si(111)Surface Science, 1984
- Lattice match: An application to heteroepitaxyJournal of Applied Physics, 1984
- Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster BeamMRS Proceedings, 1984
- Atomic Structure of the Epitaxial Al/Si InterfaceMRS Proceedings, 1984
- Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status reportSurface Science, 1983