80-kW inductive pulsed power system with a photoconductive semiconductor switch
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (6) , 576-577
- https://doi.org/10.1109/68.91040
Abstract
The performance of the GaAs photoconductive semiconductor switch (PCSS) has been optimized in the current-charged transmission-line configuration to produce a power gain of 45 with an output pulse of 80 kW. The fast falltime of the switch resistance produced by the specially tailored optical pulse that actives the PCSS is mainly responsible for the high power gain achieved. An effect similar to lock-on was found to limit the output voltage to approximately 2 kV.<>Keywords
This publication has 8 references indexed in Scilit:
- Photoconductive semiconductor switch (pcss) recoveryPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High current photoconductive semiconductor switchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Observation of power gain in an inductive energy pulsed power system with an optically controlled semiconductor opening switchApplied Physics Letters, 1990
- Basic circuits for inductive-energy pulsed power systemsJournal of Applied Physics, 1990
- 100 kW DC biased, all semiconductor switch using Si P-I-N diodes and AlGaAs 2-D laser arraysIEEE Photonics Technology Letters, 1989
- Repetitive semiconductor opening switch and application to short pulse generationLaser and Particle Beams, 1989
- A New Method to Generate Square Pulses: Optoelectronic Switching in a Current Charged Transmission LineIEEE Transactions on Plasma Science, 1987
- Optically activated semiconductors as repetitive opening switchesApplied Physics Letters, 1985